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IRGI4060DPBF 1 www.irf.com 4/17/09 pd - 97153
with ultrafast soft recovery diode =

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e g n-channel c features ? low v ce (on) trench igbt technology ? low switching losses ? 5 s scsoa ? square rbsoa ? 100% of the parts tested for i lm ? positive v ce (on) temperature coefficient. ? ultra fast soft recovery co-pak diode ? tighter distribution of parameters ? lead-free package benefits ? high efficiency in a wide range of applications ? suitable for a wide range of switching frequencies due to low v ce (on) and low switching losses ? rugged transient performance for increased reliability ? excellent current sharing in parallel operation ? low emi gc e gate collector emitter c absolute maximum ratings parameter max. units v ces collector-to-emitter breakdown voltage v i c @ t c = 25c continuous collector current i c @ t c = 100c continuous collector current i cm pulse collector current, v ge =15v i lm clamped inductive load current, v ge =20v a i f @t c =25c diode continuous forward current i f @t c =100c diode continuous forward current i fm diode maximum forward current continuous gate-to-emitter voltage v transient gate-to-emitter voltage p d @ t c =25c maximum power dissipation w p d @ t c =100c maximum power dissipation t j operating junction and c t stg storage temperature range soldering temperature, for 10 seconds 300 (0.063 in. (1.6mm) from case) mounting torque, 6-32 or m3 screw 10 lbfin (1.1 nm) thermal resistance parameter min. typ. max. units r jc junction-to-case - igbt ?? 3.40 r jc junction-to-case - diode ?? 6.10 r cs case-to-sink, flat, greased surface ? 0.5 ? r ja junction-to-ambient, typical socket mount ?? 65 wt weight ? 2.0 ? g -55 to + 150 20 30 37 15 c/w v ge 600 14 7.5 23 30 14 7.5 30
IRGI4060DPBF 2 www.irf.com notes: v cc = 80% (v ces ), v ge = 20v, l = 28 h, r g = 47 pulse width limited by max. junction temperature.

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electrical characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units conditions v (br)ces collector-to-emitter breakdown voltage 600 ? ? v v ge = 0v,i c =100 a v (br)ces / t j temperature coeff. of breakdown voltage ?0.66?v/c v ge = 0v, i c = 250 a ( -55 -150 o c ) ?1.501.72 i c = 7.5a, v ge = 15v, t j = 25c v ce(on) collector-to-emitter saturation voltage ? 1.75 ? v i c = 7.5a, v ge = 15v, t j = 125c ?1.81? i c = 7.5a, v ge = 15v, t j = 150c v ge(th) gate threshold voltage 4.0 6.5 v v ce = v ge , i c = 250 a v ge ( th ) / tj threshold voltage temp. coefficient ? -12 ?mv/c v ce = v ge , i c = 1.0ma ( -55 -150 o c ) gfe forward transconductance ? 5 ? s v ce = 50v, i c = 7.5a, pw =80 s i ces ?1.025 a v ge = 0v,v ce = 600v ? 400 ? a v ge = 0v, v ce = 600v, t j =150c v fm ?2.183.00 v i f = 7.5a ?1.60? i f = 7.5a, t j = 150c i ges gate-to-emitter leakage current ? ? 100 na v ge = 20 v switchin g characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units q g total gate charge (turn-on) ? 19 29 i c = 7.5a q ge gate-to-emitter charge (turn-on) ? 4.3 6 nc v cc = 400v q gc gate-to-collector charge (turn-on) ? 8.3 12 v ge = 15v e on turn-on switching loss ? 47 89 i c = 7.5a, v cc = 400v, v ge = 15v e off turn-off switching loss ? 141 248 j r g = 47 , l=1mh, l s = 150nh, t j = 25c e total total switching loss ? 188 337 energy losses include tail and diode reverse recovery t d(on) turn-on delay time ? 29 38 i c = 7.5a, v cc = 400v t r rise time ? 16 25 ns r g = 47 , l=1mh, l s = 150nh t d(off) turn-off delay time ? 101 112 t j = 25c t f fall time ? 28 37 e on turn-on switching loss ? 107 ? i c = 7.5a, v cc = 400v, v ge = 15v e off turn-off switching loss ? 196 ? j r g = 47 , l=1mh, l s = 150nh, t j = 150c e total total switching loss ? 304 ? energy losses include tail and diode reverse recovery t d(on) turn-on delay time ? 28 ? i c = 7.5a, v cc = 400v t r rise time ? 17 ?ns r g = 47 , l=1mh, l s = 150nh t d(off) turn-off delay time ? 118 ? t j = 150c t f fall time ? 53 ? c ies input capacitance ? 537 ? v ge = 0v c oes output capacitance ? 47 ? v cc = 30v c res reverse transfer capacitance ? 16 ? f = 1mhz t j = 150c, i c = 30a rbsoa reverse bias safe operating area full square v cc = 480v, vp =600v rg = 47 , v ge = +20v to 0v v cc = 400v, vp =600v r g = 47 , v ge = +15v to 0v erec reverse recovery energy of the diode ? 102 ? jt j = 150 o c trr diode reverse recovery time ? 73 ? ns v cc = 400v, i f = 7.5a irr peak reverse recovery current ? 11 ? a v ge = 15v, rg = 47 , l=1mh, l s =150nh s pf conditions ? diode forward voltage drop collector-to-emitter leakage current scsoa short circuit safe operating area 5 ?
IRGI4060DPBF www.irf.com 3 fig. 1 - maximum dc collector current vs. case temperature fig. 2 - power dissipation vs. case temperature fig. 4 - reverse bias soa t j = 150c; v ce = 15v fig. 5 - typ. igbt output characteristics t j = -40c; tp <60 s fig. 6 - typ. igbt output characteristics t j = 25c; tp < 60 s fig. 3 - forward soa, t c = 25c; t j 150c 0 20 40 60 80 100 120 140 160 t c (c) 0 2 4 6 8 10 12 14 16 i c ( a ) 0 20 40 60 80 100 120 140 160 t c (c) 0 10 20 30 40 p t o t ( w ) 10 100 1000 v ce (v) 0 1 10 100 i c a ) 0246810 v ce (v) 0 4 8 12 16 20 24 28 i c e ( a ) v ge = 18v v ge = 15v v ge = 12v v ge = 10v v ge = 8.0v 0246810 v ce (v) 0 4 8 12 16 20 24 28 i c e ( a ) v ge = 18v v ge = 15v v ge = 12v v ge = 10v v ge = 8.0v 1 10 100 1000 v ce (v) 0.01 0.1 1 10 100 i c ( a ) 10 s 100 s 1ms dc
IRGI4060DPBF 4 www.irf.com fig. 9 - typical v ce vs. v ge t j = -40c fig. 7 - typ. igbt output characteristics t j = 150c; tp < 60 s fig. 10 - typical v ce vs. v ge t j = 25c fig. 8 - typ. diode forward characteristics tp < 60 s fig. 12 - typ. transfer characteristics v ce = 50v; tp < 60 s fig. 11 - typical v ce vs. v ge t j = 150c 0246810 v ce (v) 0 4 8 12 16 20 24 28 i c e ( a ) v ge = 18v v ge = 15v v ge = 12v v ge = 10v v ge = 8.0v 0.0 1.0 2.0 3.0 4.0 5.0 v f (v) 0 10 20 30 40 50 60 i f ( a ) -40c 25c 150c 5101520 v ge (v) 0 2 4 6 8 10 12 14 v c e ( v ) i ce = 3.8a i ce = 7.5a i ce = 15a 5101520 v ge (v) 0 2 4 6 8 10 12 14 v c e ( v ) i ce = 3.8a i ce = 7.5a i ce = 15a 5101520 v ge (v) 0 2 4 6 8 10 12 14 v c e ( v ) i ce = 3.8a i ce = 7.5a i ce = 15a 2468101214 v ge (v) 0 4 8 12 16 20 24 28 i c e ( a ) t j = -40c t j = 25c t j = 150c
IRGI4060DPBF www.irf.com 5 fig. 13 - typ. energy loss vs. i c t j = 150c; l = 1mh; v ce = 400v, r g = 47 ; v ge = 15v. fig. 15 - typ. energy loss vs. r g t j = 150c; l = 1mh; v ce = 400v, i ce = 7.5a; v ge = 15v fig. 14 - typ. switching time vs. i c t j = 150c; l=1mh; v ce = 400v r g = 47 ; v ge = 15v fig. 16 - typ. switching time vs. r g t j = 150c; l=1mh; v ce = 400v i ce = 7.5a; v ge = 15v fig. 17 - typical diode i rr vs. i f t j = 150c fig. 18 - typical diode i rr vs. r g t j = 150c; i f = 7.5a 0 4 8 12 16 i c (a) 0 100 200 300 400 e n e r g y ( j ) e off e on 0 4 8 12 16 i c (a) 1 10 100 1000 s w i c h i n g t i m e ( n s ) t r td off t f td on 0 25 50 75 100 125 r g ( ) 0 40 80 120 160 200 240 e n e r g y ( j ) e on e off 0 25 50 75 100 125 r g ( ) 10 100 1000 s w i c h i n g t i m e ( n s ) t r td off t f td on 0 4 8 12 16 i f (a) 0 4 8 12 16 20 i r r ( a ) r g = 100 r g = 10 r g = 22 r g = 47 0 25 50 75 100 125 r g ( ) 4 8 12 16 i r r ( a )
IRGI4060DPBF 6 www.irf.com fig. 20 - typical diode q rr v cc = 400v; v ge = 15v; t j = 150c fig. 19 - typical diode i rr vs. di f /dt v cc = 400v; v ge = 15v; i ce = 7.5a; t j = 150c fig. 24 - typical gate charge vs. v ge i ce = 7.5a, l=600 h fig. 23 - typ. capacitance vs. v ce v ge = 0v; f = 1mhz fig. 22 - typ. v ge vs short circuit time v cc =400v, t c =25c fig. 21 - typical diode e rr vs. i f t j = 150c current (a) 0 500 1000 di f /dt (a/ s) 4 8 12 16 i r r ( a ) 0 500 1000 di f /dt (a/ s) 200 300 400 500 600 700 q r r ( n c ) 10 22 47 100 15a 7.5a 3.8a 0 4 8 12 16 i f (a) 0 100 200 300 e n e r g y ( j ) 10 22 47 100 0 100 200 300 400 500 v ce (v) 1 10 100 1000 c a p a c i t a n c e ( p f ) cies coes cres 0 4 8 12 16 20 q g , total gate charge (nc) 0 2 4 6 8 10 12 14 16 v g e ( v ) 300v 400v 8 9 10 11 12 13 14 15 16 v ge (v) 20 40 60 80 0 5 10 15 20 time ( s) t sc i sc
IRGI4060DPBF www.irf.com 7 fig. 26. maximum transient thermal impedance, junction-to-case (diode) fig 25. maximum transient thermal impedance, junction-to-case (igbt) 1e-006 1e-005 0.0001 0.001 0.01 0.1 1 t 1 , rectangular pulse duration (sec) 0.001 0.01 0.1 1 10 t h e r m a l r e s p o n s e ( z t h j c ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc ri (c/w) ? (sec) 0.813883 0.000438 0.907622 0.044572 1.679598 2.1542 j j 1 1 2 2 3 3 r 1 r 1 r 2 r 2 r 3 r 3 c ci= i / ri ci= i / ri 1e-006 1e-005 0.0001 0.001 0.01 0.1 1 t 1 , rectangular pulse duration (sec) 0.001 0.01 0.1 1 10 t h e r m a l r e s p o n s e ( z t h j c ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc ri (c/w) ? (sec) 0.433397 0.000095 1.635087 0.001553 1.4856 0.05426 2.547074 2.646 j j 1 1 2 2 3 3 r 1 r 1 r 2 r 2 r 3 r 3 ci i / i / c 4 4 r 4 r 4
IRGI4060DPBF 8 www.irf.com fig.c.t.1 - gate charge circuit (turn-off) fig.c.t.2 - rbsoa circuit 1k vcc dut 0 l fig.c.t.3 - s.c.soa circuit fig.c.t.4 - switching loss circuit fig.c.t.5 - resistive load circuit fig.c.t.6 - typical filter circuit for v (br)ces measurement 100k 22k dut d1 0.0075 g force c fo rce c sen se e fo rce e sen se v cc l rg 80 v dut 480v + - v cc
IRGI4060DPBF www.irf.com 9 fig. wf1 - typ. turn-off loss waveform @ t j = 150c using fig. ct.4 fig. wf2 - typ. turn-on loss waveform @ t j = 150c using fig. ct.4 wf.3- typ. reverse recovery waveform @ t j = 150c using ct.4 wf.4- typ. short circuit waveform @ t j = 25c using ct.3 ## -50 0 50 100 150 200 250 300 350 400 450 500 550 -0.2 0 0.2 0.4 0.6 time( s) v ce (v) -2 -1 0 1 2 3 4 5 6 7 8 9 10 i ce (a) 90% i ce 90% v ce 5% i ce eoff loss tf -50 0 50 100 150 200 250 300 350 400 -0.1 0 0.1 time ( s) v ce (v) -2 0 2 4 6 8 10 12 14 16 i ce (a) test current 90% test current 5% v ce 10% test current tr eon loss -450 -400 -350 -300 -250 -200 -150 -100 -50 0 50 -0.10 0.00 0.10 0.20 0.30 time ( s) v f (v) -15 -10 -5 0 5 10 i f (a) peak i rr t rr q rr 10% peak irr 0 50 100 150 200 250 300 350 400 450 500 vce -20 0 20 40 60 80 100 120
IRGI4060DPBF 10 www.irf.com ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 4/09 data and specifications subject to change without notice. this product has been designed and qualified for industrial market. qualification standards can be found on ir?s web site. to-220 full-pak package is not recommended for surface mount application. to-220 full-pak package outline dimensions are shown in millimeters (inches) to-220 full-pak part marking information logo in the assembly line "k" as s e mbled on ww 24, 2001 example: lot code 3432 t his is an irfi840g wi t h as s e mb l y part number int ernat ional rectifier 124k irf i840g note: "p" in ass embly line position indicates "l ead-f r ee" line k we e k 24 ye ar 1 = 2001 dat e code lot code as s e mb l y 34 32 note: for the most current drawing please refer to ir website at: http://www.irf.com/package/

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